강의목표
Aims:
- provide an introduction to the world of modern power semiconductor devices
- cover material specific to power semiconductor devices
Objectives:
As specific objectives, by the end of the course engineers should be able to:
- understand how the design of power semiconductor devices takes account of high voltage and currents
- know the features of the main types of power electronic devices
- understand the semiconductor technologies in power devices
강의개요
1. Introduction
- Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. Basic device physics.
2. Power Diodes
- Bipolar conduction theory. Conductivity modulation. Charge neutrality.
- Critical electric field and Breakdown. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection.
3. Power MOS Devices
- The power MOSFET: Concept, modes of operation. trade-offs. Unclamped inductive switching.
- Quasi-Saturation.
- Life-time control, Reverse recovery and body diode.
- Superjunction device and physics.
4. Insulted Gate Bipolar Transistors
- The Insulted Gate Bipolar Transistor (IGBT): modes of operation. Trade-offs. Snap-back.
- Superjunction IGBT.
5. Edge termination
- Design method for edge termination.
6. Dynamic switching
- Dynamic turn-on and turn-off behavior.
- Hard and soft switching.
- Figures of merit.
참고사항
♦ 정원이 초과되어도 대기자로 신청하시면 수강취소자 발생시 순차적으로 등록 됩니다
♦ 출석 100%, 퀴즈 3/5문제 통과시 수료증이 발급됩니다.
♦ 수강신청은 00시부터 가능합니다
♦ 수강신청 기간 내에 홈페이지에서 수강 취소해야 정상 취소처리 됩니다.
♦ 무단결석시 추후 수강신청 3개월 자동차단 후 부산대IDEC 개최강좌 수강신청은 영구제한됩니다. (부산대 블랙리스트 개별 관리)
강좌상세
| 일자 |
2019-09-26 |
시간 |
10:00 ~ 13:00 |
강사 |
강혜민 박사 Cambridge University |
| 내용 |
◦Material and Device Physics
- Basic Process review (PVD, CVD, IIP, and Photo)
- Current conduction (Unipolar and Bipolar conduction, Schottky diode, P-I-N diode, life time control, zero, temperature coefficient, parasitic capacitance, Trade-off, Technical issues) |
| 일자 |
2019-09-26 |
시간 |
14:00 ~ 17:00 |
강사 |
강혜민 박사 Cambridge University |
| 내용 |
◦Breakdown and Edge termination
- Breakdown (Poisson equation, critical electric field, punch and non-punch through, leakage)
- Edge termination design (Field plate, ring design, Floating poly, Other method, Passivation and EMC) |
| 일자 |
2019-09-27 |
시간 |
10:00 ~ 13:00 |
강사 |
강혜민 박사 Cambridge University |
| 내용 |
◦Power MOSFET and IGBT
- Standard type device (Planar gate, trench gate, double gate, shielded gate, figures of merit, Gauss law)
- Superjunction device (Pillar design, electric field profile, scaling down , fabrication issue, fast recovery, Quasi saturation)
- Basic of IGBT (Forward conduction, history of design, trade-off, design issues, life time control, superjunction IGBT) |
| 일자 |
2019-09-27 |
시간 |
14:00 ~ 17:00 |
강사 |
강혜민 박사 Cambridge University |
| 내용 |
◦Dynamic switching
- Static and dynamic capacitances (small signal capacitance and large signal capacitance)
- Hard switching and Soft switching (inductive switching, Miller plateau, half bridge, zero voltage switching, resonant switching)
- Gate ringing (parasitic inductance, device design) |
강의장소
부산대학교 제6공학관 3층 6309-2호 반도체설계교육센터
※정문기준 11시방향 201 제6공학관 건물
담당자 연락처
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