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IP명 The Design of Wide-BAND Low-Noise-Amplifier and Low Power MICS band QPSK wireless Data Transceiver for Biomedical Implant Device.
Category Analog Application Bio Implantable Device
실설계면적 3.8㎛ X 3.8㎛ 공급 전압 1.8V
IP유형 동작속도 403500000Hz
검증단계 Silicon 참여공정 MS180-1805
IP개요 This work presents the design of a wide-band low noise amplifier (LNA) with inductor-less structure having power reduction techniques like current reuse and noise cancelling and also proposed the design of MICS(402-405MHz) band bidirectional QPSK modulation scheme based wireless data transceiver for biomedical implant device using 0.18-μm CMOS technology. This proposed LNA implement stable high loop gain, with improved Noise Figure (NF) and higher linearity. The target gains more than 30dB, reduced NF to more than 0.1dB. The estimated power consumption is less than 10mW to 15mW. The prototype will be designed using State-of-the-Art Skhynix/Magnachi in 0.18μm CMOS process for range of 40MHz to 1GHz bandwidth. On the other hand, simplex
direct modulation technique is used to generate the QPSK signal generation and demodulation at the receiver.Designed transceiver has the BER of 10-5 at SNR of 14dB at the receiver with the data rate of 11mbps which satisfy the required characteristics of MICS implant device.
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