| IP명 | 1.9-GHz CMOS Power Amplifier Using an Asymmetric Broad-Side Coupled Transformer to Improve Efficiency | ||
|---|---|---|---|
| Category | Analog | Application | Wireless Communication |
| 실설계면적 | 3.8㎛ X 3.8㎛ | 공급 전압 | 3.3V |
| IP유형 | Hard IP | 동작속도 | 1.9GHz |
| 검증단계 | Silicon | 참여공정 | MS180-1901 |
| IP개요 | In this proposal, we propose a broad-side coupled transformer with reduced capacitance for RF CMOS power amplifier applications. The width of the secondary winding is reduced to reduce the parasitic coupling capacitance. Additionally, an auxiliary primary winding is added to improve the coupling between the primary and secondary windings. To prove the feasibility of the proposed transformer, we designed the transformer using 180-nm RF CMOS technology. From the simulated results of a typical and the proposed broad-side coupled transformer, we successfully find that the parasitic coupling capacitance of the proposed structure is reduced compared to that of a typical structure. The auxiliary primary winding increases the maximum available gain of the proposed transformer. Additionally, we designed CMOS power amplifiers using typical and proposed transformers. The 1.9-GHz power amplifiers are designed using 180-nm CMOS power amplifier with supply voltage of 3.3 V |
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