IP개요 |
A low-power and high data rate fully-integrated millimeter-wave CMOS transmitter for short-range wireless communication is demonstrated. The transmitter consists of a phased-locked loop (PLL), an oscillator, a modulator, and a power amplifier. With a dual-modulation technique and a highly-linear oscillator, the transmitter has low-power, high on-off isolation, and high data rate capability. Implemented in Samsung 65 nm CMOS technology, the transmitter consumes 50 mW from a supply voltage of 1 V. The transmitter is implemented on a 1.0 mm x 1.0 mm chip. The proposed transmitter can handle a data rate over 16 Gb/s using a 60 GHz carrier. As a result, the proposed transmitter shows a high energy efficiency of 3.125 pJ/bit. The maximum operation frequency is 70 GHz. The proposed circuit is based on analog design. |