IP개요 |
A short-circuit detection circuit is proposed for power electronics systems that adopt SiC MOSFETs. The proposed short-circuit detection circuit incorporates a digital circuit for processing the voltage induced at the parasitic inductance of the source of SiC MOSFET to obtain an improved stable turn-off operation of the SiC MOSFET under short-circuit condition. The proposed circuit was implemented in a 180-nm Bipolar-CMOS-DMOS (BCD) process. For functional verification, a short-circuit test board integrating the proposed short-circuit detection circuit was developed. Experimental result validates that the proposed short-circuit detection circuit effectively functions under short-circuit condition. |