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IP명 DRAM circuit
Category Analog Application processing in memory
실설계면적 3.8㎛ X 3.8㎛ 공급 전압 1.8V
IP유형 동작속도 80000000Hz
검증단계 Silicon 참여공정 MS180-1804
IP개요 In-DRAM processing circuit is able to reduce operation time and
power consumption than the traditional CPU + MEMORY system
in performing the complicated computation such as convolution.
These benefits are gained by bitwise and parallel processing of the
in-DRAM convolution circuit. To realize the in-DRAM circuit,
an inter-bank processing circuit is proposed with bitwise summation/
a comparison circuit for performing convolution inside DRAM.
Compared to the intra-bank bitwise operation, the inter-bank circuit
can significantly reduce the power consumption and the number of
row activation cycles to accomplish convolution.
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