| IP명 | A High-Voltage Active Bootstrap Gate Driver Using VSW Zero Crossing Sensing and Dynamic Dead Time Control Technique for GaN-based Automotive Electronics | ||
|---|---|---|---|
| Category | Analog | Application | Automotive electronics |
| 실설계면적 | 5㎛ X 5㎛ | 공급 전압 | 40V |
| IP유형 | Firm IP | 동작속도 | 10MHz |
| 검증단계 | Silicon | 참여공정 | DB180-2501 |
| IP개요 | We propose an efficient GaN gate driver for high switching frequencies range 1 MHz to 5 MHz to achieve reliable and smooth power conversion for electrically-powered automotive power applications. The zero-crossing sensing (ZCS) technique is used to control the bootstrap capacitor CBST charging to stabilize the bootstrap (BST) rail voltage. The ZCS senses negative spikes at switching voltage (VSW) and stops BST capacitor charging to reduce the reverse conduction losses during a dead time (tdead). A dynamic dead time controller is used to reduce the switching losses at high frequency, and a high-voltage (HV) level shifter is used to operate the high side GaN more efficiently. The proposed system can operate in the input voltage range between 12 V to 40 V. |
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