| IP명 | A Highly Efficient GaN Gate Driver using Slew-Rate Controller for Automotive Applications | ||
|---|---|---|---|
| Category | Analog | Application | gate driver |
| 실설계면적 | 5㎛ X 5㎛ | 공급 전압 | 16V |
| IP유형 | Hard IP | 동작속도 | 1MHz |
| 검증단계 | Simulation | 참여공정 | DB180-2501 |
| IP개요 | In high-power automotive applications, achieving a fast transient response is crucial. Gallium Nitride (GaN) FETs, with their low RDS,ON and Qg, support high-efficiency operations at high frequencies but also generate noise and voltage spikes due to the rapid rise time of the switching node voltage (VSW). This creates a trade-off between efficiency and operational stability. Additionally, GaN devices lack a body diode, leading to significant dead-time power losses, which necessitates adaptive dead-time modulation varying with the load current. Traditional dead-time control struggles with propagation delay and does not account for variations in IO or VSW, resulting in inefficiencies. This study introduces a varactor-based adaptive dead-time modulator and a slew-rate controller to optimize the balance between efficiency and stability. The proposed methods allow sub-nanosecond dead-times and adaptable gate driving capabilities, enhancing efficiency while managing VSW spikes. Fabricated using a 180nm BCDMOS process, the gate driver chip demonstrates significant improvements in efficiency and operational stability, achieving a maximum efficiency of 90.5% and notable reductions in dead-time and negative peaking voltages. |
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