| IP명 | 180 nm BCDMOS-Based Class J Power Amplifier for 6G Mid-Upper Band Operation | ||
|---|---|---|---|
| Category | Analog | Application | 6G |
| 실설계면적 | 5㎛ X 5㎛ | 공급 전압 | 1.8, 3.3, 3.4V |
| IP유형 | Hard IP | 동작속도 | 5G, 6GHz |
| 검증단계 | Simulation | 참여공정 | DB180-2501 |
| IP개요 | This work proposes the design of a Class J power amplifier utilizing a 180 nm BCDMOS process, specifically optimized for 6G applications. The BCDMOS technology enables high output power, making it ideal for achieving not only high efficiency and wide bandwidth but also increased power delivery.This proposal details the design methodology, performance expectations, and the advantages of employing a Class J amplifier in 6G mid-upper band wireless systems | ||
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