반도체설계교육센터

강의제목

파워반도체 소자 핵심이론

구분

부산대 / 설계강좌 / 중급 / 이론

강의시간

7시간 2분

열람기간

10일

이용료(일반)

무료

이용료(학생)

무료

1. Introduction
- Introduction to power electronics and power devices. Basics of power electronics, power devices and applications. Basic device physics.

2. Power Diodes
- Bipolar conduction theory. Conductivity modulation. Charge neutrality.
- Critical electric field and Breakdown. None punch-through (NPT) and punch-through (PT) high voltage junction. On-state - high level injection.

3. Power MOS Devices
- The power MOSFET: Concept, modes of operation. trade-offs. Unclamped inductive switching.
- Quasi-Saturation.
- Life-time control, Reverse recovery and body diode.
- Superjunction device and physics.

4. Insulted Gate Bipolar Transistors
- The Insulted Gate Bipolar Transistor (IGBT): modes of operation. Trade-offs. Snap-back.
- Superjunction IGBT.

5. Edge termination
- Design method for edge termination.

6. Dynamic switching
- Dynamic turn-on and turn-off behavior.
- Hard and soft switching.
- Figures of merit.§§§

강의시간	강사(이름/직급/소속)	내용	조회수
2시간 1분	강혜민/박사/Cambridge University	◦Material and Device Physics - Basic Process review (PVD, CVD, IIP, and Photo) - Current conduction (Unipolar and Bipolar conduction, Schottky diode, P-I-N diode, life time control, zero, temperature coefficient, parasitic capacitance, Trade-off, Techni	25
1시간 24분	강혜민/박사/Cambridge University	◦Breakdown and Edge termination - Breakdown (Poisson equation, critical electric field, punch and non-punch through, leakage) - Edge termination design (Field plate, ring design, Floating poly, Other method, Passivation and EMC)	24
2시간 1분	강혜민/박사/Cambridge University	◦Power MOSFET and IGBT - Standard type device (Planar gate, trench gate, double gate, shielded gate, figures of merit, Gauss law) - Superjunction device (Pillar design, electric field profile, scaling down , fabrication issue, fast recovery, Quasi satur	18
1시간 48분	강혜민/박사/Cambridge University	◦Dynamic switching - Static and dynamic capacitances (small signal capacitance and large signal capacitance) - Hard switching and Soft switching (inductive switching, Miller plateau, half bridge, zero voltage switching, resonant switching) - Gate ringi	10

담당자 연락처

담당자 : 전우숙
연락처 : 042-350-4424
이메일 : mayj@kaist.ac.kr

강의자료

강의자료.zip

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