| IP개요 |
This report propose H-Band RF analog transmitter and receiver system components design with CMOS 65nm process. In S65-1601 fabrication, varactor multiplier, high integrated antenna, 300GHz MODEM, and mixer are designed. The DC supply range is 0 to 3V, but some DC bias can be 10V because of high resistance. All circuits are designed at 300GHz except multiplier. The target of multiplier is 600GHz and 900GHz. The varactor mode multiplier has more 20dBm Pout profit compared to common active multiplier. The high integrated antenna has more 80% benefit of area than simple patch. The result of switch modulator circuit and single detector demodulator predict that the direct OOK system can be designed by CMOS fabrication at 300GHz. At H-Band mixer can be designed to construct heterodyne system. |
