| IP명 | Cross-coupled Back-bias Voltage (VBB) Generator using Discharge N-channel Metal Oxide Semiconductor Transistor | ||
|---|---|---|---|
| Category | Analog | Application | Memory |
| 실설계면적 | 5㎛ X 5㎛ | 공급 전압 | 1.2V |
| IP유형 | Hard IP | 동작속도 | 10 MHz |
| 검증단계 | Silicon | 참여공정 | DB180-2301 |
| IP개요 | The proposed circuit is back-bias voltage generator for dynamic random access memory. This circuit is a back-bias voltage (VBB) generator circuit that uses a discharge NMOS transistor scheme with a cross-coupled structure. The proposed circuit uses discharge NMOS transistors and only requires two pumping capacitors without any auxiliary pump units. The discharge NMOS transistors can fully turn on and off during the operation. The proposed circuit is implemented with DB Hitek 0.18 um. | ||
- 레이아웃 사진 -
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