| IP개요 |
This work presents the design of a fully-integrated high-voltage charge pump IC for implantable medical devices using Skhynix/Magnachip 0.18-µm CMOS process. The implemented charge pump IC is used to generate high-voltage DC supply of around 12.8 V for the neural stimulator circuit using 3.2-V input voltage with on-chip pumping and load capacitors. The proposed charge pump IC is comprised of a feed-forward high efficiency capacitive pumping path and a feedback regulation path to maintain the output voltage with varying load current between 10 µA and 300 µA. The proposed IC achieves more than 50% power efficiency at maximum current load condition. |
