| IP명 | Integrated RF Path Bi-Directional Stacked Power and Low-Noise Amplifier for 6G Beamforming Application | ||
|---|---|---|---|
| Category | Analog | Application | 통신 |
| 실설계면적 | 4㎛ X 4㎛ | 공급 전압 | 3V |
| IP유형 | Hard IP | 동작속도 | 15GHz |
| 검증단계 | Silicon | 참여공정 | SS28-2501 |
| IP개요 | This paper introduces a bi-directional power amplifier and low-noise amplifier (PA-LNA) designed for upper mid-band frequencies in 6G communication. Unlike conventional PA-LNAs that utilize cross-coupling capacitor neutralization to mitigate insertion loss, the proposed PALNA employs a differential structure and cross-coupling capacitors to minimize gain loss. To support bi-directional operation, the input and output matching networks of both PA and LNA are shared. This is achieved by incorporating switches within the matching networks to configure the PA’s output matching and the LNA’s input matching. This innovative PA-LNA design contributes to chip size reduction and enables integration with beamforming elements, making it highly suitable for advanced 6G communication systems. |
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