| IP개요 |
We propose an efficient Gallium Nitride (GaN) gate driver for a reliable and smooth power conversion for automotive power applications. The bootstrap charge protection circuit is designed to achieve enough overdrive charge for driving GaN switches, which operate with stable voltage and robust operation. This approach does not need second-order protection, which can reduce the chip area and cost. The capacitive coupled level shifter’s (LS) common-mode transient immunity (CMTI) is increased by using common-mode (CM) control circuitry. The proposed system can operate in the input voltage range between 3 V and 40 V. |
