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IP명 Monolithic 3D-Integrated Neuromorphic PIM System with Self Rectifying Passive RRAM and CMOS Neurons for SNN
Category Mixed Application 인공지능 (AI)
실설계면적 4㎛ X 4㎛ 공급 전압 1.0V
IP유형 Hard IP 동작속도 100MHz
검증단계 Silicon 참여공정 SS028-2502
IP개요 - TCAM Arrays: Perform parallel ternary (0, 1, don't-care) pattern matching between input spike patterns and stored class templates. Both SRAM-based and RRAM-based implementations enable comparative evaluation of associative memory performance.
- MAC Arrays: Execute analog vector-matrix multiplication by accumulating currents from activated synapse cells. The dual implementation allows direct comparison of computational accuracy and energy efficiency between SRAM and RRAM technologies.
- LIF Neuron Circuits: Analog CMOS circuits operating in subthreshold region. Each neuron integrates input current on a membrane capacitor, applies leakage decay, and generates output spikes when the threshold is exceeded.
- Mesh NoC: A 2×2 mesh router structure providing scalable, address-based asynchronous communication between functional blocks with minimized latency and routing congestion.
- 레이아웃 사진 -