| IP명 | Pulse signal high-speed processing circuit | ||
|---|---|---|---|
| Category | Analog | Application | 군용장비 |
| 실설계면적 | 3㎛ X 3㎛ | 공급 전압 | 3.3V |
| IP유형 | Hard IP | 동작속도 | 10MHz |
| 검증단계 | Simulation | 참여공정 | MS180-1601 |
| IP개요 | The transient radiation effects were caused due to the pulse-type radiation by initial nuclear event. When the electronic device exposed to the pulse radiation, the photocurrent are generated through the ionizing phenomenon in the body of semiconductor. the transistor operate randomly or the logic state of the D flip-flop and memory cell are changed by the photocurrent. In addition, the Latchup can be caused by this photocurrent, because the structural features of the semiconductor process make a structure of parasitic p-n-p-n. If the Latchup is generated in the electronic device, the device not only operate unusually, but also increase heat generation of the device according to the amount of Latchup current. In the worst case, the electronic device can cause permanent damage because of the burn out. Fig. 1 shows inside photo of the LM118 chip. As shown in Fig. 1, the power supply terminal of the chip burned out because of the high-dose of a transient radiation. In this paper, a pulse signal high-speed processing circuit was designed in order to protect the electronic system from the pulse radiation |
||
|
- 레이아웃 사진 -
|
|||