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IP명 CMOS High-Q Channel-Selection Low-Noise Amplifier Employing N-Path Bandpass and Notch Filters for Advanced Cellular Applications.
Category Analog Application cellular
실설계면적 4㎛ X 3㎛ 공급 전압 1.2V
IP유형 Hard IP 동작속도 2.2Hz
검증단계 Silicon 참여공정 HM-2003
IP개요 A CMOS tunable channel-selection low-noise amplifier (LNA) employing a high-Q RF bandpass (BP)/ band-rejection (BR) filter is proposed for advanced cellular applications. The proposed LNA implements a high-Q RF BP/BR filter characteristic based on 4-path filter theory from a baseband poly-phase filter and a low-pass filter. It also provides a high rejection ratio for closein transmitter leakage signal and out-of-band blockers. Therefore, it compensates the limited filtering performance of the CMOS duplexer and improves the blocker-tolerance and linearity of the receiver. The proposed LNA is designed in 65- nm CMOS technology. It achieves a maximum voltage gain of 20.4 dB, a minimum NF of 3.24 dB, and a notch rejection ratio of more than 56.4 dB. It can also cover a low-band and a mid-band from 0.7 up to 2.2 GHz i cellular applications. It draws an average current of 13 mA from a supply voltage of 1.2 V.
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