| IP명 | An E-band Wideband Transmitter and Receiver for RadCom applications in CMOS | ||
|---|---|---|---|
| Category | Mixed | Application | RFIC통신 |
| 실설계면적 | 2.18㎛ X 1㎛ | 공급 전압 | 2.5V |
| IP유형 | Hard IP | 동작속도 | 60GHz |
| 검증단계 | Silicon | 참여공정 | HM-2101 |
| IP개요 | We present an E-band wideband transmitter and receiver in CMOS technology for supporting radar and communication (RadCom) applications. Power amplifier, upconverting mixer, and LO part were designed and integrated in a single TX chip. Low noise amplifier, down-converting mixer, IF amplifier, and LO part were designed and integrated in a single RX chip. LO part was composed of driver amplifier for LO signal, frequency quadrupler, and phase rotator. Phase shifting of the TX and RX was realized by phase rotator and polyphase filter, and the frequency quadrupler quadruples the phase. For the compact size and small power consumption, the frequency quadrupler based on phase-controlled push-push structure was used. In the TX, stackedFET topology was used for increasing output power. To achieve the high data rate, wideband design was the most important factor. Transformers were carefully designed to get wideband property. In previous work, simple measurement was conducted with 64-QAM signal. The baud rate was set to 1.62 GBaud at each frequency ranges for 64-QAM. The total data rate was measured at 58.32 Gbps at 64- QAM, and the EVM was about −24.2 dB. |
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