| IP명 | 0.18um CMOS 공정 n-MOSFET의 TID(Total ionizing dose) 효과 영향 분석 | ||
|---|---|---|---|
| Category | Analog | Application | 인공위성용 |
| 실설계면적 | 3㎛ X 3㎛ | 공급 전압 | 3.3/1.8V |
| IP유형 | Hard IP | 동작속도 | 10MHzHz |
| 검증단계 | Silicon | 참여공정 | MS180-1702 |
| IP개요 | Electronic systems in the atomic plant or space applications such as satellites require integrated circuit with a radiation-tolerant. When CMOS (Complementary Metal Oxide Semiconductor) integrated circuits are operated in a radiation environment such as outer space, they are subjected to many types of anomalies. In severe cases, these radiation-induced anomalies can cause a system to lose all functionality. Among these radiation-induced anomalies, the TID (Total Ionizing Dose) effects, which corresponds to long-term accumulated radiation damage, generally worsens the performance of CMOS integrated circuits by altering the characteristics of the n-MOSFETs (n-type Metal Oxide Semiconductors) contained in the circuit. Therefore, the n-MOSFETs of the CMOS integrated circuits in the environment of space or atomic plant should have the radiation-tolerant characteristics in order to mitigate or eliminate the TID effects. In this paper, the electrical characteristics of CMOS was measured and analyzed, in order to confirm the TID effects of the conventional 0.18um CMOS according to the total radiation dose. The n-MOSFETs with radiation-tolerant will be designed through the study of the CMOS structure based on the analysis result. Further, we will verify the radiation-tolerant function of the logic device composed of the n-MOSFET with radiation-tolerant. The logic circuit was designed in 0.18um process to the analog type. Also, the supply voltage is 3.3V and the operating frequency is 10MHz. |
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