| IP개요 |
The increase of integration and power density make over current and over temperature protection circuits necessary. A low-dropout regulator (LDO) with protection circuits was designed based on traditional structures of LDO. Over current protection circuits convert the detecting current into the gate voltage which controls the switch MOSFET. And by the temperature character of Bipolar Junction Transistor(BJT) conducting voltage, over temperature protection circuits can invert the comparator and protect the whole chip. The circuits was designed based on 0.18㎛ CMOS technology. The LDO input voltage was 1.8V, and the output voltage was 1.3V, the maximum output current was 10mA. |
