| IP명 | Components for Sub-terahertz Generations in 65 nm CMOS | ||
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| Category | Analog | Application | Sub-terahertz sensing |
| 실설계면적 | 4㎛ X 4㎛ | 공급 전압 | 1.2V |
| IP유형 | Hard IP | 동작속도 | 300Hz |
| 검증단계 | Silicon | 참여공정 | SS65-1603 |
| IP개요 | Components for a sub-THz signal generator is designed in Samsung 65-nm CMOS process. The signal generator with a phase-locked loop configuration includes sub-THz oscillator, frequency multiplier and frequency divider are designed for a signal generator with a phase-locked loop configuration operating at ~250 GHz. The supply voltage will be determined by the detail design. The circuit is categorized as Analog/RF circuits. | ||
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