| IP개요 |
The pulse radiation produce transient radiation effects on electronic systems that have the semiconductor elements. The electronic system has active and passive elements, of which the active elements are mostly made of silicon-based semiconductor elements. The incidence of high-dose transient radiation into the silicon-based semiconductor element induces the photo-current due to the creation of electron-hole pairs, which causes the upset phenomenon of active elements or triggers the parasitic thyristor in the element, resulting in Latchup. If the Latchup phenomenon continues over a specific time, permanent failure may occur in the semiconductor elements due to the over current heating, and the entire electronic system may lose its functions. Therefore, the paper propose the pulse radiation detector circuit in order to protect the electronic systems. The circuit was designed in 0.18um process to the analog type. also, the supply voltage is 3.3V and the operating frequency is 50MHz. |
