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IP명 Implementation of Different Single-Photon Avalanche Diode SPAD structures with Quenching Pixel circuits in 180 nm CMOS
Category Analog Application Pixel circuit with SPAD
실설계면적 3.6㎛ X 3.6㎛ 공급 전압 3.3V
IP유형 Hard IP 동작속도 900MHz
검증단계 Silicon 참여공정 MS180-1604
IP개요 We describe Single-Photon Avalanche Diode (SPAD), the device which employs different topologies P+ anode with p-well guard ring to protect discharging at premature level also sub-ns window minimize the dark count rate as possible to maximize the signal to noise ratio of signal. SPADs are designed to be combined with quenching pixel circuit architecture to form a fluorescence life time image sensor. A 5um, 10 um and 15um SPADs and pixels with different structures are going to implementing to check different fill factors and speed of frame rate to 400 to 500 fps.
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