| IP개요 |
A THz detector is designed for 350-nm CMOS process. The operation frequency of the detector is 250 GHz with the bandwidth of 50 GHz. The detector employs a wideband antenna and plasma wave transistors operated in a saturation region. The design optimization will be studied to implement THz passive and active devices for the detector in the low-cost legacy CMOS process node with four metal layers. The supply voltage will be determined by the detail design procedure after installing of the design kit. The circuit is categorized as Analog/RF circuits. |
